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1 electronic-grade silicon
(EG-Si) <ic> ■ electronic-grade-Silizium nEnglish-german technical dictionary > electronic-grade silicon
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2 electronic grade silicon
Англо-русский словарь технических терминов > electronic grade silicon
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3 electronic grade silicon
2) Электроника: кремний полупроводниковой чистотыУниверсальный англо-русский словарь > electronic grade silicon
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4 electronic-grade silicon
Универсальный англо-русский словарь > electronic-grade silicon
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5 electronic grade silicon
English-Russian electronics dictionary > electronic grade silicon
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6 electronic grade silicon
The New English-Russian Dictionary of Radio-electronics > electronic grade silicon
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7 electronic grade silicon
English-Russian dictionary of electronics > electronic grade silicon
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8 silicon
1) кремний, Si•-
amorphous silicon
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arc-furnace silicon
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bulk silicon
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cast silicon
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cellular silicon
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columnar silicon
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crystalline silicon
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Czochralski grown silicon
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Czochralski silicon
- Czochralski pulling silicon -
dislocation-tree silicon
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doped silicon
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electron-bombarded silicon
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electronic grade silicon
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electron-irradiated silicon
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epitaxial silicon
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extrinsic silicon
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ferrochrome silicon
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floating-zone silicon
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float-zone silicon
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high-purity silicon
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high-resistivity silicon
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hydrogenated silicon
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implanted silicon
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intrinsic silicon
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ion-implanted silicon
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irradiated silicon
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large-grained crystalline silicon
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low-resistivity silicon
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metallurgical-grade silicon
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metallurgical silicon
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microcrystalline silicon
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molten silicon
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neutron transmutation doped silicon
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noncrystalline silicon
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n-type silicon
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oxygen-containing silicon
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passivated crystalline silicon
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phosphorus-doped silicon
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plasma deposited silicon
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plasma sprayed silicon
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polycrystalline silicon
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proton-irradiated silicon
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p-type silicon
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pulsed-annealed silicon
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radiation-damaged silicon
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ribbon silicon
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semicrystalline silicon
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single-crystalline silicon
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solar-grade silicon
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sputtered silicon
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tetraethyl silicon
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unimplanted silicon
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upgraded metallurgical grade silicon
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zone-method silicon -
9 silicon
ппкремний || кремниевый- electronic grade siliconsilicon on sapphire — микр. технология "кремний на сапфире", КНС-технология
- epitaxial silicon
- float-zone silicon
- high-resistivity silicon
- intrinsic silicon
- i-type silicon
- low-temperature polycrystalline silicon
- metallurgical grade silicon
- n-type silicon
- passivated silicon
- polycrystalline silicon
- porous silicon
- p-type silicon
- seminsulating polycrystalline silicon
- single-crystalline silicon -
10 silicon
пп.кремний || кремниевый- electronic grade siliconsilicon on sapphire — микр. технология "кремний на сапфире", КНС-технология
- epitaxial silicon
- float-zone silicon
- high-resistivity silicon
- intrinsic silicon
- i-type silicon
- low-temperature polycrystalline silicon
- metallurgical grade silicon
- n-type silicon
- passivated silicon
- polycrystalline silicon
- porous silicon
- p-type silicon
- seminsulating polycrystalline silicon
- single-crystalline siliconThe New English-Russian Dictionary of Radio-electronics > silicon
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11 gas
- carrier gas
- degenerate electron gas
- dopant gas
- electronic-grade gas
- etchant gas
- forming gas
- impurity gas
- inert gas
- mixed gas
- noble gas
- occluded gas
- process gas
- rare gas
- reaction gas
- sealing gas
- silicon-source gas
- stripping gas
- two-dimension electron gas
- VLSI-grade gas
- zero-dimensional electron-hole gas
- 2D hole gas -
12 Noyce, Robert
SUBJECT AREA: Electronics and information technology[br]b. 12 December 1927 Burlington, Iowa, USA[br]American engineer responsible for the development of integrated circuits and the microprocessor chip.[br]Noyce was the son of a Congregational minister whose family, after a number of moves, finally settled in Grinnell, some 50 miles (80 km) east of Des Moines, Iowa. Encouraged to follow his interest in science, in his teens he worked as a baby-sitter and mower of lawns to earn money for his hobby. One of his clients was Professor of Physics at Grinnell College, where Noyce enrolled to study mathematics and physics and eventually gained a top-grade BA. It was while there that he learned of the invention of the transistor by the team at Bell Laboratories, which included John Bardeen, a former fellow student of his professor. After taking a PhD in physical electronics at the Massachusetts Institute of Technology in 1953, he joined the Philco Corporation in Philadelphia to work on the development of transistors. Then in January 1956 he accepted an invitation from William Shockley, another of the Bell transistor team, to join the newly formed Shockley Transistor Company, the first electronic firm to set up shop in Palo Alto, California, in what later became known as "Silicon Valley".From the start things at the company did not go well and eventually Noyce and Gordon Moore and six colleagues decided to offer themselves as a complete development team; with the aid of the Fairchild Camera and Instrument Company, the Fairchild Semiconductor Corporation was born. It was there that in 1958, contemporaneously with Jack K. Wilby at Texas Instruments, Noyce had the idea for monolithic integration of transistor circuits. Eventually, after extended patent litigation involving study of laboratory notebooks and careful examination of the original claims, priority was assigned to Noyce. The invention was most timely. The Apollo Moon-landing programme announced by President Kennedy in May 1961 called for lightweight sophisticated navigation and control computer systems, which could only be met by the rapid development of the new technology, and Fairchild was well placed to deliver the micrologic chips required by NASA.In 1968 the founders sold Fairchild Semicon-ductors to the parent company. Noyce and Moore promptly found new backers and set up the Intel Corporation, primarily to make high-density memory chips. The first product was a 1,024-bit random access memory (1 K RAM) and by 1973 sales had reached $60 million. However, Noyce and Moore had already realized that it was possible to make a complete microcomputer by putting all the logic needed to go with the memory chip(s) on a single integrated circuit (1C) chip in the form of a general purpose central processing unit (CPU). By 1971 they had produced the Intel 4004 microprocessor, which sold for US$200, and within a year the 8008 followed. The personal computer (PC) revolution had begun! Noyce eventually left Intel, but he remained active in microchip technology and subsequently founded Sematech Inc.[br]Principal Honours and DistinctionsFranklin Institute Stuart Ballantine Medal 1966. National Academy of Engineering 1969. National Academy of Science. Institute of Electrical and Electronics Engineers Medal of Honour 1978; Cledo Brunetti Award (jointly with Kilby) 1978. Institution of Electrical Engineers Faraday Medal 1979. National Medal of Science 1979. National Medal of Engineering 1987.Bibliography1955, "Base-widening punch-through", Proceedings of the American Physical Society.30 July 1959, US patent no. 2,981,877.Further ReadingT.R.Reid, 1985, Microchip: The Story of a Revolution and the Men Who Made It, London: Pan Books.KF
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